Representative Publications:

46.  Guangyi Chen#, Shaomian Qi#, Jianqiao Liu, Di Chen, Jiongjie Wang, Shili Yan, Yu Zhang, Shimin Cao, Ming Lu, Shibing Tian, Kangyao Chen, Peng Yu, Zheng Liu, X. C. Xie, Jiang Xiao, Ryuichi Shindou, Jian-Hao Chen*, “Electrically Switchable van der Waals Magnon Valves”, Nature Communications, Online Publication DOI: 10.1038/s41467-021-26523-1 (2021)

45.  Di Chen, Jiankun Li, Zheng Wei, Xinjian Wei, Maguang Zhu, Jing Liu, Guangyu Zhang, Zhiyong Zhang, Jian-Hao Chen*, “Repairable Polymer Solid Electrolyte Gated MoS2 Field Effect Devices with Large Radiation Tolerance”, Advanced Electronic Materials, 2100619 (2021)

44.  Zhijian Xie, Xinjian Wei, Xiaobin Qiang, Yu Zhang, Shili Yan, Shimin Cao, Congkuan Tian, Peipei Wang, Liyuan Zhang, G. D. Gu, Haizhou Lu, Jian-Hao Chen*, “Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5”, Physical Review B 104, 125439 (2021)

43.  Shimin Cao, Chuanwu Cao, Shibing Tian, Jian-Hao Chen*, “Enhancement of spin-orbit coupling and magnetic scattering in hydrogenated graphene”, Physical Review B 104, 125422 (2021)

42. Guangyi Chen, Yu Zhang, Shaomian Qi, Jian-Hao Chen*, “Gate-controlled magnetic transitions in Fe3GeTe2 with lithium ion conducting glass substrate”, Chinese Physics B 30, 097504 (2021)

41.  Zhijian Xie, Xinjian Wei, Shimin Cao, Yu Zhang, Shili Yan, G.D. Gu, Qiang Li, Jian-Hao Chen*, “Electron-electron interactions and weak antilocalization in few-layer ZrTe5 devices”, Physical Review B 103, 155408 (2021)

40.  Zhongxu Wei#, Qian Li#, Ben-Chao Gong#, Xinjian Wei#, Wei Hu, Zhuang Ni, Ge He, Mingyang Qin, Anna Kusmartseva, Fedor V. Kusmartsev, Jie Yuan, Beiyi Zhu, Qihong Chen, Jian-Hao Chen, Kai Liu, and Kui Jin*, “Two superconductor-insulator phase transitions in the spinel oxide Li1±xTi2O4?δ induced by ionic liquid gating”, Phys. Rev. B 103, L140501 (2021)

39.  Junchao Ma, Rodrigo Muniz, Shaomian Qi, Jiawei Lai, Kenan Zhang, Yinan Liu, Xiao Zhuo, Shuxia Chen, Jian-Hao Chen, Shuyun Zhou, Dong Sun*, “Circular photogalvanic effect from third-order effect in 1T'-MoTe2”, 2D Materials 8, 025016 (2021)

38.  Shimin Cao, Chuanwu Cao, Shibing Tian and Jian-Hao Chen*, “Evidence of tunable magnetic coupling in hydrogenated graphene”, Physical Review B 102, 045402 (2020)

37. Jiawei Lai, Junchao Ma, Yinan Liu, Kenan Zhang, Xiao Zhuo, Jian-Hao Chen, Shuyun Zhou and Dong Sun*, “Photocurrent response of type-II dirac semimetal PtTe2”, 2D Materials 7,034003 (2020)

36. Seunguk Song, Yeoseon Sim, Se-Yang Kim, Jung Hwa Kim, Inseon Oh, Woongki Na, Do Hee Lee, Jaewon Wang, Shili Yan, Yinan Liu, Jinsung Kwak, Jian-Hao Chen, Hyeonsik Cheong, Jung-Woo Yoo, Zonghoon Lee & Soon-Yong Kwon, “Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit”, Nature Electronics 3, 207-215 (2020)

35.  Zongwei Ma, Wang Zhu, Gaoting Lin, Yinan Liu, Feng Jin, Yang Yang, Tong Wu, Xuan Luo, Yuping Sun, Jian-Hao Chen, Yan Sun, Chun Zhou, and Zhigao Sheng*, “Micro-MOKE with optical interference in the study of 2D Cr2Ge2Te6 nanoflake based magnetic heterostructures”, AIP Advances 9, 125116 (2019)

34.  Shimin Cao, Wenlong Ma, Gan Zhai, Zhijian Xie, Xueshi Gao, Yan Zhao, Xiumei Ma, Lianming Tong, Shuang Jia and Jian-Hao Chen*, “Anisotropic Raman spectrum and transport properties of AuTe2Br flakes”, Journal of Physics: Condensed Matter 32, 12LT01(2019)

33.  Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang*, Huaihong Guo, Chengbing Qin*, Liantuan Xiao, Jing Zhang, Jian-Hao Chen*, Zheng Han*, Zhidong Zhang, "Gate tunable giant anisotropic resistance in ultra-thin GaTe", Nature Communications 10, 2302 (2019)

32. Qinsheng Wang, Jingchuan Zheng, Yuan He, Jin Cao, Xin Liu, Maoyuan Wang, Junchao Ma, Jiawei Lai, Hong Lu, Shuang Jia, Dayu Yan, Youguo Shi, Junxi Duan, Junfeng Han, Wende Xiao, Jian-Hao Chen, Kai Sun, Yugui Yao*, Dong Sun*, “Robust edge photocurrent response on layered type II Weyl semimetal WTe2”, Nature Communications 10, 5736 (2019)

31.  Shili Yan, Hai Huang, Zhijian Xie, Guojun Ye, Xiao-Xi Li, Takashi Taniguchi, Kenji Watanabe, Zheng Han, Xianhui Chen*, Jianlu Wang*, Jian-Hao Chen*, “Reliable nonvolatile memory black phosphorus ferroelectric field effect transistors with van der Waals buffer”, ACS Applied Materials & Interfaces 11, 42358 (2019)

30. Junchao Ma, Qiangqiang Gu, Yinan Liu, Jiawei Lai, Peng Yu, Xiao Zhuo, Zheng Liu, Jian-Hao Chen*, Ji Feng*, and Dong Sun*, "Nonlinear Photoresponse of Type-II Weyl Semimetals", Nature Materials 18, 476 (2019) Times Cited: 79

29. Congwei Tan, Min Tang, Jinxiong Wu, Yinan Liu, Tianran Li, Yan Liang, Bing Deng, Zhenjun Tan, Teng Tu, Yichi Zhang, Cong Liu, Jian-Hao Chen, Yong Wang, Hailin Peng*, "Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors", Nano Letters 19, 2148 (2019)

28. Chuanwu Cao, Xin Liu, Xiao Ren, Xianzhe Zeng, Dong Sun, Shuyun Zhou, Yang Wu, Yuan Li, Jian-Hao Chen*, "Barkhausen effects in the first order structural phase transition in type-II Weyl semimetal MoTe2", 2D Materials 5, 044003 (2018) Times Cited: 1

27. Jiawei Lai, Xin Liu, Junchao Ma, Qinsheng Wang, Kenan Zhang, Xiao Ren, Yinan Liu, Qiangqiang Gu, Xiao Zhuo, Wei Lu, Yang Wu, Yuan Li, Ji Feng, Shuyun Zhou, Jian-Hao Chen*, Dong Sun*, “Anisotropic Broadband Photo Response of Layered Type-II Weyl semimetal MoTe2”, Advanced Materials 30, 1707152 (2018) TIMES CITED (SCI): 4

26. Jiawei Lai, Yinan Liu, Junchao Ma, Xiao Zhuo, Yu Peng, Wei Lu, Zheng Liu , Jian-Hao Chen*, and Dong Sun*, “Broadband Anisotropic Photoresponse of the “Hydrogen Atom” Version Type-II Weyl Semimetal Candidate TaIrTe4”, ACS Nano 12, 4055 (2018) Times Cited: 3

25. Chaoyi Cai, Jian-Hao Chen*, “Electronic transport properties of Co cluster decorated graphene”, Chinese Physics B 27(6), 067304 (2018)

24. Yinan Liu, Qiangqiang Gu, Yu Peng, Shaomian Qi, Na Zhang, Yinong Zhang, Xiumei Ma, Rui Zhu, Lianming Tong, Ji Feng*, Zheng Liu* and Jian-Hao Chen*, “Raman Signatures of Broken Inversion Symmetry and In-plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4”, Advanced Materials 30, 1706402 (2018) TIMES CITED (SCI): 33

· Invited to show case the result in 2018 China National Science and Technology Week and Beijing Science and Technology Week, May 19, 2018.

23. Rongjie Zhang, Zhijian Xie, Chunhua An, Shuangqing Fan, Qiankun Zhang, Sen Wu, Linyan Xu, Xiaodong Hu, Daihua Zhang, Dong Sun, Jian-Hao Chen, and Jing Liu*, "Ultraviolet Light-Induced Persistent and Degenerated Doping in MoS2 for Potential Photocontrollable Electronics Applications", ACS Appl. Mater. Interfaces 10, 27840 (2018) Times Cited: 3

22.  Qiankun Zhang, Yinan Liu, Jiawei Lai, Shaomian Qi, Chunhua An, Yao Lu, Xuexin Duan, Wei Pang, Daihua Zhang, Dong Sun, Jian-Hao Chen* and Jing Liu*, “Liquid phase mass production of air-stable black phosphorus /phospholipids nanocomposite with ultralow tunneling barrier”, 2D Materials 5, 025012 (2018)

21.  Xiao-Xi Li, Zhi-Qiang Fan, Pei-Zhi Liu, Mao-Lin Chen, Xin Liu, Chuan-Kun Jia, Dong-Ming Sun, Xiang-Wei Jiang, Zheng Han, Vincent Bouchiat, Jun-Jie Guo, Jian-Hao Chen, Zhi-Dong Zhang, “Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor”, Nature Communications 8, 970 (2017). TIMES CITED (SCI): 10

20.  Shi-Li Yan, Zhi-Jian Xie, Jian-Hao Chen*, Takashi Taniguchi, Kenji Watanabe , “Electrically tunable energy band gap in dual-gated ultra-thin black phosphorus field effect transistors”, Chinese Physics Letters 34, 047304 (2017). TIMES CITED (SCI): 6

19.  Xin Liu*, Zhiran Zhang, Chaoyi Cai, Shibing Tian, Satya Kushwaha, Hong Lu, Takashi Taniguchi, Kenji Watanabe, Robert J Cava, Shuang Jia* and Jian-Hao Chen*, “Gate tunable magneto-resistance of ultra-thin WTe2 devices”, 2D Materials 4, 021018 (2017)

18.  Shibing Tian, Pengjie Wang, Xin Liu, Junbo Zhu, Hailong Fu, Takashi Taniguchi, Kenji Watanabe, Jian-Hao Chen* and Xi Lin*, “Nonlinear transport of graphene in the quantum Hall regime”, 2D Materials 4, 015003 (2016) TIMES CITED (SCI): 1

17.  F. Zheng, C. Cai, S. Ge, X. Zhang,X. Liu, H. Lu, Y. Zhang, J. Qiu, T.Taniguchi, K. Watanabe, S. Jia, J. Qi, Jian-Hao Chen*, D. Sun*, J. Feng*, “On the Quantum Spin Hall Gap of Monolayer 1T'-WTe2”, Advanced Materials 28, 4845 (2016) TIMES CITED (SCI): 36

16.  J. Hellerstedt, M. Edmonds, Jian-Hao Chen, W. G. Cullen, C. X. Zheng, and Michael S. Fuhrer*, “Thickness and growth-condition dependence of in-situ mobility and carrier density of epitaxial thin-film Bi2Se3”, Appl. Phys. Lett. 105, 173506 (2014) TIMES CITED (SCI): 10

15.  Jian-Hao Chen, G. Autès, N. Alem, F. Gargiulo, A. Gautam, M. Linck, C. Kisielowski, O. V. Yazyev, S. G. Louie and A. Zettl*, “Growth of a Linear Defect in Graphene for Gate-Tunable Valley Filtering”, Physical Review B 89, 121407(R) (2014) TIMES CITED (SCI): 61

14.     Peter Bai, Joseph Kao, Jian-Hao Chen, William Mickelson, Alex Zettl, Ting Xu, “Nanostructures on Graphene using Supramolecule and Supramolecular Nanocomposites”, Nanoscale 6, 4503 (2014)       TIMES CITED (SCI): 4

13.  A. Gibb, N. Alem, Jian-Hao Chen, K. Erickson, J. Ciston, A. Gautam,  M. Linck, A. Zettl,

“Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride”, Journal of the American Chemical Society 135, 6758(2013) TIMES CITED (SCI): 114

12.  Jian-Hao Chen, L. Li, W. G. Cullen, E. D. Williams, M. S. Fuhrer,“Origin of logarithmic resistance correction in graphene Reply”, Nature Physics 8, 353(2012)  TIMES CITED (SCI): 13

11.  Jian-Hao Chen, L. Li, W. G. Cullen, E. D. Williams, M. S. Fuhrer, “Tunable Kondo Effect in Graphene with Defects”, Nature Physics 7, 535(2011) TIMES CITED (SCI): 226

10.  W. G. Cullen, M. Yamamoto, K. M. Burson, Jian-Hao Chen, C. Jang, L. Li, M. S. Fuhrer, E. D. Williams,

“High-fidelity conformation of graphene to SiO2 topographic features”, Physical Review Letters 105, 215504 (2010) TIMES CITED (SCI): 93

9.  J. Katoch, Jian-Hao Chen, R. Tsuchikawa, C. W. Smith, E. R. Mucciolo, and M. Ishigami,

“Uncovering the Dominant Scatterer in Graphene Sheets on SiO2”, Physical Review B 82, 081417(R) (2010)  (Editor’s Suggestion) TIMES CITED (SCI): 43

8.  S. Xiao, Jian-Hao Chen, S. Adams, E. D. Williams, M. S. Fuhrer, “Charged Impurity Scattering in Bilayer Graphene”, Physical Review B 82, 041406(R) (2010)  TIMES CITED (SCI): 68

7.  Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, “Defect Scattering in Graphene”, Physical Review Letters 102, 236805 (2009) TIMES CITED (SCI): 378

6.  C. Jang, S. Adam, Jian-Hao Chen, E. D. Williams, S. Das Sarma, M. S. Fuhrer, “Tuning the Effective Fine Structure Constant in Graphene”, Physical Review Letters 101, 146805 (2008) 

 TIMES CITED (SCI): 254 

5.  Jian-Hao Chen, C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer, “Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2”, Nature Nanotechnology 3, 206 (2008)  TIMES CITED (SCI): 1751

4.  Jian-Hao Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, M. Ishigami, “Charged Impurity Scattering in Graphene”, Nature Physics 4, 377 (2008)  TIMES CITED (SCI): 971

3.  Jian-Hao Chen, M. Ishigami, C. Jang, D. R. Hines, M. S. Fuhrer, E. D. Williams, “Printed Graphene Circuits”, Advanced Materials 19, 3623 (2007)  TIMES CITED (SCI): 152

2.  M. Ishigami, J. -H. Chen, W. G. Cullen, M. S. Fuhrer, E. D. Williams, “Atomic Structure of Graphene on SiO2”, Nano Letters 7, 1643 (2007)  TIMES CITED (SCI): 1063

1.  M. Ishigami, Jian-Hao Chen, E. D. Williams, D. Tobias, Y. F. Chen, M. S. Fuhrer,

“Hooge’s Constant for Carbon Nanotube FETs”, Applied Physics Letters 88, 203116 (2006) 

  TIMES CITED (SCI): 74

Media Reports：

1. “Clean Up on Graphene”, Editor's Choice, Science 316, 1543, June 15, 2007.

2 .“Graphene: What lies beneath”, Research Highlights, Nature Nanotechnology, May 25, 2007. (doi:10.1038/nnano.2007.183)

3.“Graphene could be the new silicon”, Scientific American News Blog, March 31, 2008.

4.“Is Graphene the new silicon?”, NSF Press Release 08-048, March 27, 2008.

5.“Carbon could enable fastest chips”, by Colin Johnson, EE Times, March 25, 2008.

6.“New way to control magnetic properties of graphene discovered”, Science Daily, April 18, 2011.

7.“Scientists make magnetic new graphene discovery”, PhysOrg.com, April 18, 2011.

8.“Tunable band-gap black-phosphorus field-effect devices in operation”, National Science Review 4, 791, June 28, 2018 (Research Highlights).

9.“Benchtop cosmology exploits solid-states systems”, Physics World Characterization and Modeling  November 10, 2018.

9.“In situ measurements reveal cobalt-decorated graphene behaviour”, Physics World Research Update  June 28, 2018.

10. Cover article for Nature Materials 18, issue 5, May 2019.

11.“Lighting up Weyl semimetals”, News and Views, Nature Materials 18, 428 (2019).

Conference Publications：

4.  Hellerstedt, J; Jian-Hao Chen; Kim, D; Cullen, WG; Zheng, C. X.; Fuhrer, MS, In situ monitoring of resistivity and carrier concentration during molecular beam epitaxy of topological insulator Bi2Se3, MICRO/NANO MATERIALS, DEVICES, AND SYSTEMS,  Proceedings of SPIE, 2013, 8923 (DOI: 10.1117/12.2033659) TIMES CITED (SCI): 1

3.  Jian-Hao Chen, C. Jang, M. Ishigami, S.Xiao, W. G. Cullen, E. D. Williams, M. S. Fuhrer,

“Diffusive Charge Transport in Graphene on SiO2”, Solid State Communications 149, 1080 (2009)     (Proceedings of 2009 Graphene Week)  TIMES CITED (SCI)：78

2.  D. R. Hines, A. E. Southard, A. Tunnell, V. Sangwan, T. Moore, Jian-Hao Chen, M. S. Fuhrer, E. D. Williams, “Transfer printing as a method for fabricating hybrid devices on flexible substrates”, Proceedings of SPIE 6658, Organic Field-Effect Transistors VI (2007) TIMES CITED (SCI): 2

1.  D. R. Hines, A. E. Southard, V. Sangwan, Jian-Hao Chen, M. S. Fuhrer, E. D. Williams, “Organic and carbon-based electronics printed onto flexible substrates”, International Semiconductor Device Research Symposium pp. 1-2, DOI: 10.1109/ISDRS.2007.4422520 (2007)

Patents

1.  陈剑豪、蔡超逸、曹世民、曹传午、郭方准，一种超高真空兼容的低温强磁场输运装置(实用新型)，授权号: 2017213057435

2.  陈剑豪、曹世民、蔡超逸，一种超高真空环境的多自由度样品传递装置（发明），授权号: 201710463009X

3.  陈剑豪、颜世莉、谢志坚、王建禄，一种铁电场效应管及其制备方法（发明），授权号：2017103387151

4.  陈剑豪、曹世民、蔡超逸，一种低震动超高真空低温物性测量装置（发明），   授权号：2017108173962

5.  陈剑豪、曹世民、蔡超逸，超高真空低温样品台（发明），授权号：2017108339991

6.  陈剑豪、曹世民、蔡超逸、曹传午、郭方准，一种超高真空兼容的低温强磁场原位输运装置（发明），受理号：2017109412208

7.  陈剑豪、王善、刘静，一种超高真空兼容的热辐射屏蔽装置及其屏蔽方法（发明），授权号：2020102850542

8.  陈剑豪、曹世民、刘静，一种超高真空低温样品台连接锁及其控制方法（发明），授权号：202010222879X