Overview：In scanning electron microscopy, a narrow beam of electrons with energy typically up to 30 keV is focused on a specimen, and is scanned along a pattern of parallel lines. Various signals are generated as a result of the impact of the incident electrons, which are collected to form an image or to analyze the sample surface. These are mainly secondary electrons (SE), with energy of a few eVs, high-energy electrons backscattered from the primary beam (BSE), and characteristic X-rays.

Applications：Observation and analysis of the microstructure morphology and chemical composition

Features：

• Resolution：1.0nm(15KV)，1/6nm(1kV)

• Acceleration Voltage：20V-30kV

• Detector：EF-SE, Inlens-SE, 5S-HBSD

• Maximum sample size (diameter): 250mm

• EBL: Raith Elphy Quantum

• Write field range: 0.5"μ"m×0.5"μ"m~2mm×2mm