Overview： Dual beam focused ion beam system is a scanning electron microscope with very high-resolution topographical imaging and etching capabilities. It is equipped with a finely focused ion beam to modify the sample.

Applications: Three-dimensional characterization and sample preparation, ultra-fine nanostructure etching.

Features：

• Electron beam resolution: 0.6nm

• Electron beam accelerating voltage range: 200 V – 30 kV

• Ion beam resolution: 2.5nm

• Ion beam accelerating voltage range: 500 V – 30 kV

• Detector：Everhart-Thornley SE detector (ETD), Elstar in-column SE/BSE detector, DBS, IR camera

• Maximum sample size (diameter): 110mm

• Analysis: EDS