Overview：Deep reactive ion etching (DRIE) using the Bosch process can obtain very high-aspect-ratio structures with anisotropies more than 30:1 and excellent sidewall profiles with tunable etch rates.

Applications: Fabricating deep Si holes and vias with high aspect ratios, high density chip wiring.

Features：

• Bosch process

• Etch rate: 2-3μm/min

• Maximum wafer diameter: 6 inch

• Sidewall angles: 90±0.5°

• Etching uniformity: ≤3%