Deep Reactive Ion Etching (Omega LPX Rapier )

2021/1/25 13:10:31


Overview:Deep reactive ion etching (DRIE) using the Bosch process can obtain very high-aspect-ratio structures with anisotropies more than 30:1 and excellent sidewall profiles with tunable etch rates.

Applications: Fabricating deep Si holes and vias with high aspect ratios, high density chip wiring.


  • Bosch process

  • Etch rate: 2-3μm/min

  • Maximum wafer diameter: 6 inch

  • Sidewall angles: 90±0.5°

  • Etching uniformity: ≤3%