Overview： Atomic layer deposition (ALD) is a chemical vapour deposition method based on sequential, self-saturating surface reactions. Many kinds of compact thin films can be obtained by ALD.

Applications: Deposition of fine controlled dielectric materials such as oxides, nitrides, etc.

Features：

Maximum wafer diameter: 8 inch

Maximum deposition temperature: 500℃

Temperature control accuracy: ±1℃

Deposition uniformity: ≤1%