Overview：The Cobra ICP etcher sources produce a high density of reactive species at low pressure, with an independently controlled DC bias enhancing plasma energy. Its process modules offer excellent uniformity, high-throughput, high-precision and low-damage etching processes for wafer sizes up to 200mm. 

Applications：III-V etch processes, such as GaAs & InP laser optoelectronics, SiC & GaN power electronics, RF device low damage GaN etch. VCSEL GaAs/AlGaAs etch.

Features：

• High etch rates are achieved by high ion density (>1011 cm3) and high radical density.

• Separate RF and ICP generators provide separate control over ion energy and ion density, enabling high process flexibility.

• Low pressure processing yet still high density for improved profile control.

• Atom layer etching.

• Wafer clamping with He backside cooling.

• Wide temperature range electrode, -150 ℃ to 400 ℃.

• Compatible with all wafer sizes up to 200mm.

• In-situ chamber cleaning and end-pointing.

• 10MFC controlled gas lines (Cl2, BCl3, HBr, H2, CH4, SF6, CHF3, Ar, O2, N2)

• ICP RF Power: 13.56MHz, Max.3000W, automatic matching

• Bias RF Power: 13.56MHz, Max.600W, automatic matching