Overview：The RIE-230iP is a reliable and durable load-lock ICP etching system designed for research and development (R&D). The system utilizes proprietary “Tornado Coil Electrode” to efficiently generate stable, high density plasma which ensures high selectivity, high precision and excellent uniformity.

Applications：Metal etching such as Al, etc.; Compound semiconductor etching such as GaN, GaAs, InP, etc.; Si based materials etching such as Si, SiO2, SiNx, Poly-Si, etc.

Features：

• Process up to ?230mm (5ⅹ?3”, 3ⅹ?4”, 1ⅹ?8”)

• Load-lock chamber allows chlorine chemistry use.

• ESC with helium backside cooling to control wafer temperature.

• proprietary “Tornado Coil Electrode” to efficiently generate stable, high density plasma.

• Fully automatic “one-button” operation with full manual override.

• Automatic pressure control that allows for precise control of process pressure independent of gas flow.

• 6 MFC controlled gas lines (Cl2, BCl3, SF6, Ar, O2, N2)

• ICP RF Power: 13.56MHz, Max.1000W, automatic matching

• Bias RF Power: 13.56MHz, Max.500W, automatic matching