Overview：The PD-220NL is a load-lock PECVD(Plasma Enhanced Chemical Vapor Deposition) system. Compared to other deposition technologies such as PVD and Thermal CVD, it can deposit thin films with high uniformity on the wafers at relatively low temperature (less than 350 ℃). Furthermore, this plasma deposition technology offers excellent material property control (refractive index, hardness and more) of thin films.

Applications：deposition of barrier materials, such as SiO2, SiNx, a-Si, SiON thin films.

Features：

• Capacity to process 9ⅹ?2”, 5ⅹ?3”, 3ⅹ?4”, or 1ⅹ?8” wafers per batch in a compact design, using  minimal clean room space.

• Excellent uniformity and high rate deposition with control of film properties such as refractive index, stress and wet chemical etch rate.

• Excellent process stability and repeatability.

• RF power：13.56MHz, Max.300W, automatic matching.

• 6 MFC-controlled gas lines (5%SiH4, NH3, N2O, N2, CF4 and O2).

• The substrate can be heated to Max.350 ℃.

• The shower head also can be heated to Max.200 ℃.