Kai Chang
Kai Chang

Research Scientist (PI)
Division of Quantum State of Matter
Office 545
Email: changkai@baqis.ac.cn

Research Group: Low-dimensional Quantum Materials

Dr. Chang received his B.S. degree from School of Physics, Shandong University in 2009, and Ph.D. degree from Department of Physics, Tsinghua University in 2015. He worked in Max Planck Institute of Microstructure Physics as a postdoctoral research staff until the end of 2019, and then joined BAQIS as the Principal Investigator of the Low-dimensional Quantum Materials team in Division of Quantum State of Matter. Dr. Kai Chang dedicated to the molecular beam epitaxial (MBE) growth and in situ scanning tunneling microscopy (STM) characterization of low-dimensional quantum materials, including 2D ferroelectric/ferromagnetic materials, topological materials, unconventional superconductors, etc. In BAQIS, he is building a laboratory combining MBE, ultra-low/variable temperature STM and ultra-fast optical thin film characterization approaches. His current work focuses on the electronic structure tuning effect of 2D ferroic materials in their heterostructures with topological materials.


Representative Publications (Corresponding authors are indicated with *)

1.  S. Barraza-Lopez*, B. M. Fregoso, J. W. Villanova, S. S. P. Parkin, K. Chang*. Colloquium: Physical properties of group-IV monochalcogenide monolayers. Appearing in Rev. Mod. Phys. Preprint: ArXiv:2009.04341 

2. K. Chang*, F. Küster, B. J. Miller, J.-R. Ji, J.-L. Zhang, P. Sessi, S. Barraza-Lopez, and S. S. P. Parkin*. Microscopic manipulation of ferroelectric domain walls in SnSe monolayers at room temperature. Nano Lett. (2020). doi:10.1021/acs.nanolett.0c02357 

3. S.-Y. Yang, K. Chang*, and S. S. P. Parkin*. Large planar Hall effect in bismuth thin films. Phys. Rev. Research 2, 022029(R) (2020). doi:10.1103/PhysRevResearch.2.022029

4. K. Chang, B. J. Miller, H. Yang, H. Lin, S. S. P. Parkin, S. Barraza-Lopez, Q.-K. Xue, X. Chen, and S.-H. Ji. Standing waves induced by valley-mismatched domains in ferroelectric SnTe monolayers. Phys. Rev. Lett. 122, 206402 (2019). doi:10.1103/PhysRevLett.122.206402

5. K. Chang and S. S. P. Parkin. The growth and phase distribution of ultrathin SnTe on graphene. APL Materials 7, 041102 (2019). doi:10.1063/1.509154 

6. K. Chang, T. P. Kaloni, H. Lin, A. Bedoya-Pinto, A. K. Pandeya, I. Kostanovskiy, K. Zhao, Y. Zhong, X. Hu, Q.-K. Xue, X. Chen, S.-H. Ji, S. Barraza-Lopez, and S. S. P. Parkin. Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure. Advanced Materials 31, 1804428 (2019). doi:10.1002/adma.201804428 

7. K. Chang, J. Liu, H. Lin, N. Wang, K. Zhao, A. Zhang, F. Jin, Y. Zhong, X. Hu, W. Duan, Q. Zhang, L. Fu, Q.-K. Xue, X. Chen, and S.-H. Ji. Discovery of robust in-plane ferroelectricity in the atomic-thick SnTe. Science 353, 274 (2016). doi:10.1126/science.aad8609

8. K. Chang, P. Deng, T. Zhang, H.-C. Lin, K. Zhao, S.-H. Ji, L.-L. Wang, K. He, X.-C. Ma, X. Chen, and Q.-K. Xue. Molecular beam epitaxy growth of superconducting LiFeAs film on SrTiO3(001) substrate. EPL 109, 28003 (2015). doi:10.1209/0295-5075/109/28003 

9. J. Liu, K. Chang, S.-H. Ji, X. Chen, and L. Fu. Apparatus and methods for memory using in-plane polarization. US patent, No.: US 9,959,920 B2. Date of patent: May 1, 2018.