Prof. Hongqi Xu's Group Has Made Progress on Superconductor-Coupled InSb Nanosheet Quantum Dot
2026/02/10
We realize a superconductor-coupled quantum dot (QD) in an InSb nanosheet, a 2D platform promising for studies of topological superconductivity. The device consists of a superconductor-QD-superconductor junction, where a bottom bilayer gate defines the QD and allows tuning of its coupling to the superconducting leads. The QD exhibits large g-factors and strong spin–orbit coupling. Transport measurements reveal Coulomb diamond-shaped differential conductance features with even–odd alternating sizes and pronounced conductance lines associated with the superconducting gap, confirming a few-electron, superconductor-coupled regime. At an odd electron occupation, Kondo signatures emerge, including a zero-bias peak that splits with magnetic field and is logarithmically suppressed at elevated temperatures. We further observe a doublet-singlet quantum phase transition, manifested by a clear change of Andreev bound states from crossing to anticrossing as the coupling strength increases. These results underscore the rich physics of InSb nanosheet QDs and their promise for topological quantum devices.
Paper Link: https://pubs.acs.org/doi/full/10.1021/acs.nanolett.5c05731
中文
Email
QCloud
Log in
