Yuanfei Gao
Assistant Research Scientist
Division of Quantum Materials and Devices
Office 507 E12
Email: gaoyf@baqis.ac.cn
(2018, Journal of Physical Chemistry Letters,10.1021/acs.jpclett.8b02862), Growth mechanism for vertically oriented layered In2Se3 nanoplates (2020, Physical Review Materials, 10.1103/PhysRevMaterials.4.034002), Optical Control of Bulk Phonon Modes in Crystalline Solids (2021, Advanced Quantum Technologies , 10.1002/qute.202100103) etc.
Yuanfei Gao received the bachelor's degree from Zhengzhou University in 2013, followed by a master's and doctoral program. In 2017, he entered the Institute of Semiconductors, Chinese Academy of Sciences for joint training, and received a Ph.D in 2019. In the same year, he joined the Beijing Institute of Quantum Information Sciences for postdoctoral research and become a Assistant professor in 2021.
Dr. Gao's main research direction is the preparation of low-dimensional layered materials and the electron-phonon coupling of color centers in diamond. The representative articles: Phonon-Assisted Photoluminescence Up-Conversion of Silicon-Vacancy Centers in Diamond
Selected Pulications:
Y Gao, S Pang, H Bao, X Peng, Y Sun, S Ren, D Meng, J Zhang, Growth mechanism for vertically oriented layered In2Se3 nanoplates, Physical Review Materials, 4(3), 034002 (2020).
Y Gao, J Lai, J Zhang, Optical Control of Bulk Phonon Modes in Crystalline Solids, Advanced Quantum Technologies, 2100103 (2021).
Y Xie, S Ren, Y Gao, X Liu, P Tan, J Zhang, Measuring bulk and surface acoustic modes in diamond by angle-resolved Brillouin spectroscopy, Science China Physics, Mechanics & Astronomy 64, 287311 (2021).
Q Tan, Y Sun, X Liu, K Xu, Y Gao, S Ren, P Tan, J Zhang, Breakdown of Raman selection rules by Fr?hlich interaction in few-layer WS2, Nano Research 14, 239-244 (2021)